All-Solution-Processed Low-Voltage Organic Thin-Film Transistor Inverter on Plastic Substrate

In this paper, all-solution-processed low-voltage (<3 V) organic thin-film transistor inverters on polyethylene naphthalate plastic substrate were achieved in the bottomgate bottom-contact device configuration. In the devices, 6,13-bis(triisopropylsilylethynyl)-pentacene blended with polystyrene was used as the channel layer, and ultraviolet cross-linked polyvinyl alcohol was used as the gate dielectric layer. With optimized inkjet jetting process parameters and a proper polymer dielectric substrate surface, fine silver electrodes were formed as the source, drain, and gate electrodes. The maximum processing temperature was 150 degrees C. The devices show promising performance with a mobility of 0.8 cm(2)/(V.s), a subthreshold swing of 100 mV/decade and an ON/OFF ratio of about 10(4). The fabricated diode-load inverter has a high dc voltage gain up to 67.3 at a supply voltage of 3 V.