Electrical resistivity under extreme conditions in the Ce3Ir4Sn13 heavy fermion compound

被引：8

作者：

Collave, J. R. ^{[1
]}

Borges, H. A. ^{[1
]}

Ramos, S. M. ^{[2
,3
]}

Hering, E. N. ^{[2
,3
]}

Fontes, M. B. ^{[2
]}

Baggio-Saitovitch, E. ^{[2
]}

Eichler, A. ^{[4
]}

Bittar, E. M. ^{[2
]}

Pagliuso, P. G. ^{[5
]}

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453900 Rio De Janeiro, RJ, Brazil

[2] Ctr Brasileiro Pesquisas Fis, BR-22290180 Rio De Janeiro, RJ, Brazil

[3] UJF Grenoble 1, UMRE CEA, INAC, SPSMS, F-38054 Grenoble, France

[4] Tech Univ Carolo Wilhelmina Braunschweig, Inst Angew Phys, D-38106 Braunschweig, Germany

[5] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP, Brazil

来源：

SOLID STATE COMMUNICATIONS | 2014年 / 177卷

基金：

巴西圣保罗研究基金会;

关键词：

Heavy fermion; Ce3Ir4Sn13; Electrical resistivity; Hydrostatic pressure; PHASE-TRANSITIONS; CRYSTAL-STRUCTURE; CE3CO4SN13; TRANSPORT; BEHAVIOR; GROWTH; LA; CE;

D O I：

10.1016/j.ssc.2013.10.015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have performed measurements of temperature dependent electrical resistivity rho(T) under pressures up to 27 kbar and down to 0.1 K on single crystals of the Ce3Ir4Sn13 heavy fermion compound. At ambient pressure (P=0) we have identified in the rho(T) data interesting features associated with the presence of crystalline field effects, magnetic correlations, Kondo single impurity scattering and, possibly, a low temperature structural phase transition. All these features were mapped as a function of pressure which allowed us to construct a pressure-temperature phase diagram with these temperature scales. We have also carried out measurements of rho(T) as a function of magnetic fields up to H=8 T and the important temperature scales in rho(T) were followed with field. Enlightened also by temperature dependent specific heat experiments we discuss the possible microscopic origins of the features found in our rho(T) data. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：132 / 135

页数：4

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