Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

被引：2

作者：

Pardo, D. ^{[1
]}

Grajal, J. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Dept Signals Syst & Radiocommun, ETSI Telecomunicac, E-28040 Madrid, Spain

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 11期

关键词：

GaN; Schottky diode; modelling; frequency multiplier; frequency mixer; Monte Carlo; drift-diffusion; HIGH-FREQUENCY NOISE; CONVERSION LOSS; POWER; WAVE; DESIGN; DIODES; TEMPERATURE; TRANSPORT; MOBILITY; DENSITY;

D O I：

10.1088/0268-1242/30/11/115016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology.

引用

页数：13

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