ZnSb and GaSb bulk amorphous semiconductors: Transport properties

被引:13
作者
Antonov, VE
Barkalov, OI
Kolyubakin, AI
Ponyatovsky, EG
机构
[1] Institute of Solid State Physics, Russian Academy of Sciences
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1996年 / 198卷 / 01期
关键词
D O I
10.1002/pssb.2221980165
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Temperature dependencies of the conductivity and thermopower of bulk amorphous semiconducting alloys Zn41Sb59 and Ga100-xSbx with 47.5 < x < 55 were measured at 80 to 370 K and 120 to 370 K, respectively. The samples were prepared by solid state amorphization of the quenched high pressure phases occurring on heating at ambient pressure. The electrical properties of nonstoichiometric a-Zn41Sb59 are well described by the conventional Mott-Davis model. Those of both stoichiometric a-GaSb and nonstoichiometric a-Ga100-xSbx appear to be more unusual and require a modification of the model.
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页码:497 / 501
页数:5
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