Gamma-Ray Response of Semi-Insulating CdMnTe Crystals

被引：46
作者：
Kim, KiHyun [1 ]
Cho, ShinHang [2 ]
Suh, JongHee [2 ]
Hong, Jinki [2 ]
Kim, SunUng [2 ]
机构：
[1] Brookhaven Natl Lab, Upton, NY 11973 USA
[2] Korea Univ, Dept Phys, Chungnam 339800, South Korea
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 03期
关键词：
CdMnTe; CdZnTe; compensation; segregation coefficient; sulfur passivation; X-ray detector; X-RAY; BRIDGMAN METHOD; DETECTORS; GROWTH; CDZNTE; CD1-XMNXTE;
D O I：
10.1109/TNS.2009.2015662
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semi-insulating Cd0.9Mn0.1Te : In crystals are grown by vertical Bridgman method. The segregation coefficient of Mn in CdTe is nearly 1 so that all the CdMnTe samples obtained from one ingot have nearly a same Mn composition. Also sulfur-based passivation effectively prevent the formation of Te-oxide but large amount of Mn exist as a MnO on the CdMnTe surface. The resistivity of CdMnTe samples are low 10(10) Omega cm and well resolved Am-241 gamma peaks are seen for all detectors. The difference in spectral response can be attributed to the effect of excess Te and conductivity change due to over-compensation induced by indium segregation in CdMnTe. The mobility-lifetime products evaluated from the dependence of peak location on the bias voltage are 1 x 10(-3) cm(2)/V. The higher mobility-lifetime products in our CdMnTe crystals than other previous reports are assumed due to minimization of impurity contents in MnTe by several zone refining process.
引用
收藏
页码：858 / 862
页数：5
相关论文
共 12 条
[1]   Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors [J].
Burger, A ;
Chattopadhyay, K ;
Chen, H ;
Ndap, JO ;
Ma, XY ;
Trivedi, S ;
Kutcher, SW ;
Chen, RJ ;
Rosemeier, RD .
JOURNAL OF CRYSTAL GROWTH, 1999, 198 :872-876
[2]   GAMMA-RAY AND X-RAY-DETECTORS MANUFACTURED FROM CD1-XZNX TE GROWN BY A HIGH-PRESSURE BRIDGMAN METHOD [J].
BUTLER, JF ;
DOTY, FP ;
APOTOVSKY, B ;
LAJZEROWICZ, J ;
VERGER, L .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :291-295
[3]   Passivation of semi-insulating polycrystalline CdZnTe films [J].
Kim, Ki Hyun ;
Won, Jae Ho ;
Cho, Shin Hang ;
Suh, Jong Hee ;
Cho, Pyong Kon ;
Hong, Jinki ;
Kim, Sun Ung ;
Han, You Ree .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) :317-321
[4]   A PIEZOMODULATION STUDY OF THE ABSORPTION-EDGE AND MN++ INTERNAL TRANSITION IN CD1-XMNXTE, A PROTOTYPE OF DILUTED MAGNETIC SEMICONDUCTORS [J].
LEE, YR ;
RAMDAS, AK .
SOLID STATE COMMUNICATIONS, 1984, 51 (11) :861-863
[5]   Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method [J].
Li, GQ ;
Jie, WQ ;
Wang, T ;
Gu, Z .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) :457-460
[6]   Is the (Cd,Mn)Te crystal a prospective material for X-ray and γ-ray detectors? [J].
Mycielski, A ;
Burger, A ;
Sowinska, M ;
Groza, M ;
Szadkowski, A ;
Wojnar, P ;
Witkowska, B ;
Kaliszek, W ;
Siffert, P .
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 5, 2005, 2 (05) :1578-1585
[7]   Study of the charge collection efficiency of CdZnTe radiation detectors [J].
Nemirovsky, Y ;
Ruzin, A ;
Asa, G ;
Gorelik, J .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (08) :1221-1231
[8]  
ODIN IN, 2003, INORG MATER, V39, P425
[9]   Distribution of the high resistivity region in CdZnTe and its effects on gamma-ray detector performance [J].
Terterian, S ;
Chu, M ;
Ting, D .
JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (06) :640-644
[10]   Optimal bandgap variants of Cd1-xZnxTe for high-resolution X-ray and gamma-ray spectroscopy [J].
Toney, JE ;
Schlesinger, TE ;
James, RB .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 428 (01) :14-24
12