Indium doping of ZnSe single crystals during vapor phase growth

被引：5

作者：

Shapkin, P. V.

Nasibov, A. S.

Vaksman, Yu. F.

Nitsuk, Yu. A.

Purtov, Yu. N.

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Mechnikov Natl Univ, UA-65026 Odessa, Ukraine

来源：

INORGANIC MATERIALS | 2006年 / 42卷 / 08期

关键词：

ZnSe; Indium Content; Zinc Selenide; ZnSe Crystal; Zinc Vacancy;

D O I：

10.1134/S0020168506080073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A process for indium doping of ZnSe single crystals during vapor phase growth is described. The solubility limit of indium in ZnSe is determined as a function of temperature and zinc selenide stoichiometry. The conclusion is drawn that the entire homogeneity range of ZnSe in the equilibrium phase diagram lies at selenium-enriched compositions.

引用

页码：845 / 849

页数：5

共 8 条

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Georgobiani, AN
Aminov, UA
Korostelin, YV
Kozlovsky, VI
Nasibov, AS
Shapkin, PV
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[7] VAKSMAN YF, 2001, FIZ TEKH POLUPROV, V35, P920
[8] VAKSMAN YF, 1999, FOTOELEKTRONIKA, P77

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