Theoretical Investigation of Sn-Doped Ge2Sb2Te5 Alloy in Crystalline Phase

被引：4

作者：

Singh, Janpreet ^{[1
]}

Singh, Gurinder ^{[2
]}

Kaura, Aman ^{[2
]}

Tripathi, S. K. ^{[1
]}

机构：

[1] Panjab Univ, Dept Phys, Ctr Adv Study Phys, Chandigarh 160014, India

[2] Univ Inst Engn & Technol, Hoshiarpur 146001, India

来源：

PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS) | 2015年 / 1665卷

关键词：

Ab initio calculations; chalcogenides; crystalline solids; electrical conductivity;

D O I：

10.1063/1.4917994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge2Sb2Te5 (GST) is technologically important for phase-change random access memory applications. It has been shown that the 2.2 atomic % doping of Sn weakens the Ge-Te bond strength while maintaining the symmetry of stable phase of GST. The influence of Sn doping upon the phase change characteristics of the crystalline GST alloy has been investigated by ab initio calculations. The lattice parameter, average interface distances between two adjacent (111) layers, equilibrium volume, metallic character and electrical resistance has been calculated for the stable phase of GST and Sn-doped GST.

引用

页数：3

共 18 条

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