Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receivers

被引：2
|
作者：
Zhang, Y. P. [1 ]
Chew, K. W. [1 ]
Wong, P. F. [1 ]
机构：
[1] Nanyang Technol Univ, Intelligent Syst Res Lab, Sch EEE, Singapore, Singapore
来源：
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2006年 / 16卷 / 05期
关键词：
CMOS low-noise amplifier; radio receivers; wireless communications;
D O I：
10.1002/mmce.20164
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-mu m 6M1P CMOS technology from the system viewpoint for the first time to provide a higher gain at the high band in order to compensate the high-band signal's extra loss over the air transmission. The LNA drains 6.21 mA of current from a 1.5-V supply voltage and achieves voltage gains of 14 and 22 dB, input S, I of 15 and 18 dB, and noise figures of 2.45 and 2.51 dB at 2.4 and 5.2 GHz, respectively. (c) 2006 Wiley Periodicals, Inc.
引用
收藏
页码：444 / 453
页数：10
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