Direct observation of Si lattice strain and its distribution in the Si(001)-SiO2 interface transition layer

被引：65

作者：

Kim, YP

Choi, SK

Kim, HK

Moon, DW

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,TAEJON 305701,SOUTH KOREA

[2] KOREA INST STAND & SCI,SURFACE ANAL GRP,TAEJON 305606,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 24期

关键词：

D O I：

10.1063/1.120373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the transition layer of the Si(001)-SiO2 interface, Si lattice strain and its distribution were directly observed by medium energy ion scattering spectroscopy for thermal and ion beam oxides. The strain was in the vertical direction, and the maximum values at the SiO2 side of the transition layer were 0.96% and 2.8% for the thermal and ion beam oxides, respectively. (C) 1997 American Institute of Physics. [S0003-6951(97)00750-X].

引用

收藏

页码：3504 / 3506

页数：3

相关论文

共 15 条

[1] EVALUATION OF SIO2/(001)SI INTERFACE ROUGHNESS USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND SIMULATION [J].

AKATSU, H ;

SUMI, Y ;

OHDOMARI, I .

PHYSICAL REVIEW B, 1991, 44 (04) :1616-1621

[2] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].

FELDMAN, LC ;

SILVERMAN, PJ ;

WILLIAMS, JS ;

JACKMAN, TE ;

STENSGAARD, I .

PHYSICAL REVIEW LETTERS, 1978, 41 (20) :1396-1399

[3] X-RAY-SCATTERING STUDIES OF THE SI-SIO2 INTERFACE [J].

FUOSS, PH ;

NORTON, LJ ;

BRENNAN, S ;

FISCHERCOLBRIE, A .

PHYSICAL REVIEW LETTERS, 1988, 60 (07) :600-603

[4] GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING [J].

GUSEV, EP ;

LU, HC ;

GUSTAFSSON, T ;

GARFUNKEL, E .

PHYSICAL REVIEW B, 1995, 52 (03) :1759-1775

[5] ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE [J].

HAIGHT, R ;

FELDMAN, LC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4884-4887

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[7] ION-SCATTERING ANALYSIS PROGRAMS FOR STUDYING SURFACE AND INTERFACE STRUCTURES [J].

KIDO, Y ;

KOSHIKAWA, T .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :187-193

[8] NONDESTRUCTIVE AND QUANTITATIVE DEPTH PROFILING ANALYSIS OF ION-BOMBARDED TA2O5 SURFACES BY MEDIUM-ENERGY ION-SCATTERING SPECTROSCOPY [J].

LEE, JC ;

CHUNG, CS ;

KANG, HJ ;

KIM, YP ;

KIM, HK ;

MOON, DW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1325-1330

[9] STRESSES AND SILICON INTERSTITIALS DURING THE OXIDATION OF A SILICON SUBSTRATE [J].

LEROY, B .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02) :159-199

[10] SIO2/SI INTERFACIAL STRUCTURE ON VICINAL SI(100) STUDIED WITH 2ND-HARMONIC GENERATION [J].

LUPKE, G ;

BOTTOMLEY, DJ ;

VANDRIEL, HM .

PHYSICAL REVIEW B, 1993, 47 (16) :10389-10394