Quantum corrected drift-diffusion modeling and simulation of tunneling effects in nanoscale semiconductor devices

被引：0

作者：

Cassano, G. ^{[1
]}

de Falco, C. ^{[2
]}

Giulianetti, C. ^{[1
]}

Sacco, R. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Matemat F Brioschi, Via Bonardi 9, I-20133 Milan, Italy

[2] Universita degli Studi Milano, Dipartimento Matemat F Brioschi, I-20133 Milan, Italy

来源：

SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING | 2006年 / 9卷

关键词：

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In this communication, we deal with the numerical approximation of a Quantum Drift-Diffusion model capable of describing tunneling effects through the thin oxide barrier in nanoscale semiconductor devices. We propose a novel formulation of the mathematical model, based on a spatially heterogeneous approach, and a generalization of the Gummel decoupled algorithm, widely adopted in the case of the Drift-Diffusion system. Then, we address the finite element discretization of the linearized problems obtained after decoupling, proving well-posedness and a discrete maximum principle for each of them. Finally, we validate the physical accuracy and numerical stability of the proposed algorithms on the numerical simulation of a real-life nanoscale device.

引用

页码：301 / +

页数：5