Quantitative measure of nitrogen vacancy related effects in SmN and EuN

被引:3
作者
Azeem, Muhammad [1 ,2 ]
机构
[1] Univ Sharjah, Dept Appl Phys & Astron, Sharjah 27272, U Arab Emirates
[2] Victoria Univ, MacDiarmid Inst Adv Mat & Nanotechnol, Sch Chem & Phys Sci, Wellington 6140, New Zealand
关键词
optical properties; thin films; ferromagnetic semiconductors; spintronics;
D O I
10.1088/2043-6254/ab007d
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Density of charge carriers, introduced due to nitrogen vacancies, is estimated for SmN and EuN thin films SmN is found to be weakly doped by nitrogen vacancies with an estimated carrier density of the order of 10(24)- 10(25) m(-3) whereas the EuN thin film is heavily doped with the carrier density of the order 10(27) m(-3). The free carriers cause the significant optical absorption in the sub-gap region and mask the true energy gap. Further, the onset of the interband transition for the SmN is around 1.2 eV and for the EuN it is 0.9 eV. The results indicate a disagreement in the theoretical and the experimental values.
引用
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页数:5
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