GaInN/GaN growth optimization for high-power green light-emitting diodes

被引：65

作者：

Wetzel, C ^{[1
]}

Salagaj, T ^{[1
]}

Detchprohm, T ^{[1
]}

Li, P ^{[1
]}

Nelson, JS ^{[1
]}

机构：

[1] Uniroyal Optoelect, Tampa, FL 33619 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 06期

关键词：

D O I：

10.1063/1.1779960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two different approaches to optimize the growth conditions for high-power green light-emitting diodes (LEDs) using Ga1-xInxN/GaN metalorganic vapor phase epitaxy are discussed. We compare typical results in terms of morphology, photo-, and electroluminescence properties. We find good results for an optimization of the lateral morphological homogeneity of the active region. An extension of growth conditions for the active layers of blue LEDs was misleading. This suggests that different emission processes are involved in blue and green LEDs. We achieve die performances of 2.5 mW at 523 nm (526 nm dominant) for low forward voltages of 3.4 V at a typical drive current of 20 mA. (C) 2004 American Institute of Physics.

引用

页码：866 / 868

页数：3

共 14 条

[1]

Akasaki I, 1998, MATER RES SOC SYMP P, V482, P3

[2] Luminescences from localized states in InGaN epilayers [J].