One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications

被引：97

作者：

Kim, Tae-Wook ^{[1
]}

Choi, Hyejung ^{[1
]}

Oh, Seung-Hwan ^{[1
]}

Wang, Gunuk ^{[1
]}

Kim, Dong-Yu ^{[1
]}

Hwang, Hyunsang ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 24期

关键词：

THIN-FILM; HIGH-DENSITY; CONDUCTANCE; EFFICIENT;

D O I：

10.1002/adma.200803798

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

1T-1R hybrid-type devices consisting of a silicon transistor and a resistive polymer memory as nonvolatile memory cell elements are demonstrated. Our results show that the operation of the 1T-1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T-1R devices was maintained for more than 10(4) s.

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收藏

页码：2497 / +

页数：5

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