Quantum dots, lasers and amplifiers

被引：0
作者：
Bimberg, D [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
ECOC'01: 27TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOLS 1-6 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Continuous wave room-temperature output power of similar to3 W for edge-emitters and of 0.8 mW for vertical cavity surface-emitting lasers is realized for GaAs-based devices rising InAs quantum dots (QDs) operating at 1.3 mum. Long operation lifetimes and radiation hardness are manifested and cut-off frequency of about 10 GHz are realized. The breakthrough became possible due to development of self-organized growth in QD technology.
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页码：30 / 33
页数：4
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