Cosmic and terrestrial single-event radiation effects in dynamic random access memories

被引：62
作者：
Massengill, LW
机构：
[1] Department of Electrical and Computer Engineering, Vanderbilt University, Nashville
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 02期
关键词：
D O I：
10.1109/23.490902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed.
引用
收藏
页码：576 / 593
页数：18
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