Effect of various factors on binding energy of pyramid quantum dot: pressure, temperature and impurity position

被引:25
作者
Bahramiyan, H. [1 ]
Khordad, R. [1 ]
机构
[1] Univ Yasuj, Coll Sci, Dept Phys, Yasuj 75914353, Iran
关键词
Binding energy; Impurity; Temperature effect; Pressure effect; Pyramid quantum dot; HYDROSTATIC-PRESSURE; HYDROGENIC IMPURITY; DONOR IMPURITIES; ELECTRIC-FIELD; STATES; WELL; DEPENDENCE; WIRE; ABSORPTION; TRANSPORT;
D O I
10.1007/s11082-013-9782-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present work, we have studied the effects of hydrostatic pressure, temperature and impurity position on the donor binding energy of a pyramid quantum dot. For this goal, using variational method, we have calculated the binding energy as a function of dot size for various impurity locations, different pressures and temperatures. According to the results, we have found that the binding energy increases when the pressure increases and it enhances as the temperature decreases. Our results show that these effects play an important and considerable role on the donor binding energy of a pyramid quantum dot.
引用
收藏
页码:719 / 729
页数:11
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