Formation of the wetting layer in Ge/Si(111) epitaxy at low growth rates studied with STM

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作者：
Teys, SA [1 ]
Olshanetsky, BZ [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2002年 / 1-2卷
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O59 [应用物理学];
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摘要：
Formation of the wetting layer in Ge/Si(111) epitaxy in the 350-500degreesC temperature range was studied by scanning tunneling microscopy. The mechanism of the wetting layer formation is shown to depend on the rate of Ge deposition. At low deposition rates of the order of 10(-3) BL/min formation of the wetting layer proceeds by multilayer growth. With the increase of the deposition rate of Ge up to about 10(-2) BL/min a transition from the multilayer growth mode to the layer-by-layer one occurs. The wetting layer thickness in a Ge/Si(111) heterostructure is 3 BL.
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页码：37 / 46
页数：10
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