Formation of the wetting layer in Ge/Si(111) epitaxy at low growth rates studied with STM

被引：0
|
作者：
Teys, SA [1 ]
Olshanetsky, BZ [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2002年 / 1-2卷
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Formation of the wetting layer in Ge/Si(111) epitaxy in the 350-500degreesC temperature range was studied by scanning tunneling microscopy. The mechanism of the wetting layer formation is shown to depend on the rate of Ge deposition. At low deposition rates of the order of 10(-3) BL/min formation of the wetting layer proceeds by multilayer growth. With the increase of the deposition rate of Ge up to about 10(-2) BL/min a transition from the multilayer growth mode to the layer-by-layer one occurs. The wetting layer thickness in a Ge/Si(111) heterostructure is 3 BL.
引用
收藏
页码：37 / 46
页数：10
相关论文
共 50 条
  • [1] Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS
    Rosei, F
    Motta, N
    Sgarlata, A
    Capellini, G
    Boscherini, F
    THIN SOLID FILMS, 2000, 369 (1-2) : 29 - 32
  • [2] Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (vol 369, pg 29, 2000)
    Rosei, F
    Motta, N
    Sgarlata, A
    Capellini, G
    Boscherini, F
    THIN SOLID FILMS, 2001, 397 (1-2) : 296 - 296
  • [3] Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer
    Sawano, K.
    Hoshi, Y.
    Endo, S.
    Nagashima, T.
    Arimoto, K.
    Yamanaka, J.
    Nakagawa, K.
    Yamada, S.
    Hamaya, K.
    Miyao, M.
    Shiraki, Y.
    THIN SOLID FILMS, 2014, 557 : 76 - 79
  • [4] Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system
    Teys, S. A.
    Talochkin, A. B.
    Olshanetsky, B. Z.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (15) : 3898 - 3903
  • [5] Formation of a √3 x √3 surface on Si/Ge(111) studied by STM and LEED
    Osiecki, Jacek R.
    Uhrberg, R. I. G.
    SURFACE SCIENCE, 2009, 603 (16) : 2532 - 2536
  • [6] Steps and Ge epitaxy on vicinal Si (111) surfaces: An STM study
    Balzarotti, A.
    Fanfoni, M.
    Persichetti, L.
    Sgarlata, A.
    SURFACE SCIENCE, 2020, 696
  • [7] GROWTH OF GE ON SI(100) AND SI(113) STUDIED BY STM
    KNALL, J
    PETHICA, JB
    SURFACE SCIENCE, 1992, 265 (1-3) : 156 - 167
  • [8] Interdiffusion of Si and Ge atoms during epitaxy growth of Ge layer on Si(100) studied by Raman spectroscopy
    Jiang, Weirong
    Zhou, Xingfei
    Shi, Bin
    Hu, Dongzhi
    Liu, Xiaohan
    Jiang, Zuimin
    Zhang, Xiangjiu
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (07): : 662 - 666
  • [9] Ge(5 x 5) as a wetting layer on Si(111)
    Psiachos, D.
    Stott, M. J.
    SURFACE SCIENCE, 2009, 603 (03) : 546 - 551
  • [10] Stress induced surface melting during the growth of the Ge wetting layer on Si(001) and Si(111)
    Rosei, F
    Raiteri, P
    APPLIED SURFACE SCIENCE, 2002, 195 (1-4) : 16 - 19
12345