Supersymmetric structure of fractional quantum Hall effect in graphene

被引：0
作者：
Sahoo, S. [1 ]
Das, S. [1 ]
机构：
[1] Natl Inst Technol, Dept Phys, Durgapur 713209, W Bengal, India
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2009年 / 47卷 / 03期
关键词：
Supersymmetry; Fractional quantum Hall effect; Graphene; Landau levels; BERRYS PHASE; BILAYER; CARBON;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Graphene shows unusual low-energy electronic excitations described in terms of Dirac fermions. The Fractional quantum Hall effect in a bilayer graphene in different Landau levels within the supersymmetric formalism has been Studied. The quantized Hall conductivity is found to be sigma(xy) = +/- (n+1)v e(2)/h, where n = 0, 1, 2, 3 ...
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页码：186 / 191
页数：6
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