Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

被引：48

作者：

Lee, Mi Jung ^{[1
]}

Lee, Sangik ^{[1
]}

Lee, Sungmin ^{[2
,3
]}

Balamurugan, K. ^{[2
,3
]}

Yoon, Chansoo ^{[1
]}

Jang, Jun Tae ^{[4
]}

Kim, Sung-Hoon ^{[5
,6
]}

Kwon, Deok-Hwang ^{[7
]}

Kim, Miyoung ^{[7
]}

Ahn, Jae-Pyoung ^{[5
]}

Kim, Dae Hwan ^{[4
]}

Park, Je-Geun ^{[2
,3
]}

Park, Bae Ho ^{[1
]}

机构：

[1] Konkuk Univ, Dept Phys, Seoul 05029, South Korea

[2] Inst for Basic Sci Korea, Ctr Correlated Elect Syst, Seoul 08826, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea

[4] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[5] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South Korea

[6] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea

[7] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

来源：

NPG ASIA MATERIALS | 2018年 / 10卷

基金：

新加坡国家研究基金会;

关键词：

PLASTICITY; SWITCHES; IMPACT; FILM;

D O I：

10.1038/s41427-018-0016-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two-dimensional (2D) van der Waals (vdW) materials have recently attracted considerable attention due to their excellent electrical and mechanical properties. TmPSx (where Tm = a transition metal), which is a new class of 2D vdW materials, is expected to show various physical phenomena depending on the Tm used. In this paper, the unprecedented synaptic behavior of a vertical Ag/CrPS4/Au capacitor structure, where CrPS4 is a single-crystalline 2D vdW layer, is reported. Multi-stable resistive states were obtained using an external voltage of less than 0.3 V. Both short-term plasticity and long-term potentiation were observed by controlling the interval of the external voltage pulse. Simple mechanical exfoliation was used to develop a synaptic device based on a very thin CrPS4 layer with a thickness of similar to 17 nm. Therefore, it was demonstrated that vertical Ag/CrPS4/Au capacitors could be promising inorganic synaptic devices compatible with next-generation, flexible neuromorphic technologies.

引用

页码：23 / 30

页数：8

共 38 条

[31] Nanoionics-based resistive switching memories [J].