Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs

被引:0
作者
Kawano, Yuya [1 ]
Tsukita, Yuto [1 ]
Furuta, Jun [1 ]
Kobayashi, Kazutoshi [1 ]
机构
[1] Kyoto Inst Technol, Kyoto, Japan
来源
2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2022年
关键词
D O I
10.1109/RADECS47380.2019.9745707
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We implemented 50k-bit shift registers on SRAMbased and flash-based FPGAs to investigate their radiation hardness. As a result, soft error rates of flip flops on both FPGAs are around 40 FIT/Mbit. Mean time to failure (MTTF) in the SRAM-based one is 3.8 x 10(7) hour/failure, while MTTF in flash-based one is 5.5 x 10(9) hour/failure. Those results clearly show that in the SRAM-based FPGA must be rebooted or configuration memory must be refreshed much more frequently than the flash-based one.
引用
收藏
页码:379 / 382
页数:4
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