Prospects of Ternary Cd1-xZnxS as an Electron Transport Layer and Associated Interface Defects in a Planar Lead Halide Perovskite Solar Cell via Numerical Simulation

被引：16

作者：

Chowdhury, Towhid Hossain ^{[1
,2
]}

Ferdaous, Mohammad Tanvirul ^{[3
]}

Wadi, Mohd. Aizat Abdul ^{[1
,2
]}

Chelvanathan, Puvaneswaran ^{[1
]}

Amin, Nowshad ^{[1
,3
]}

Islam, Ashraful ^{[2
]}

Kamaruddin, Nurhafiza ^{[1
]}

Zin, Muhammad Irsyamuddin M. ^{[1
]}

Ruslan, Mohd Hafidz ^{[1
]}

Bin Sopian, Kamaruzzaman ^{[1
]}

Akhtaruzzaman, Md. ^{[1
]}

机构：

[1] Natl Univ Malaysia, SERI, Bangi 43600, Selangor, Malaysia

[2] Natl Inst Mat Sci, Ctr Green Res Energy & Environm Mat, Photovolta Mat Grp, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[3] Natl Univ Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 05期

关键词：

Cd1-xZnxS; electron transport layer; interface defect; perovskite solar cell; SCAPS-1D;

D O I：

10.1007/s11664-018-6154-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study we present a ternary alloy, Cd1-xZnxS as an electron transport layer for a planar lead halide perovskite solar cell via numerical simulation with solar cell capacitance simulator (SCAPS) software. Performance dependence on molar composition variation in the Cd1-xZnxS alloy was studied for the mixed perovskite CH3NH3PbI3-xClx absorber and spiro-OMeTAD hole transport material in a planar perovskite solar cell. Additionally, the defects on both Cd1-xZnxS/CH3NH3PbI3-xClx and CH3NH3PbI3-xClx/spiro-OMeTAD interface were thoroughly investigated. Simultaneously, a thickness of 700 nm for CH3NH3PbI3-xClx absorber with 50-nm-thick Cd0.2Zn0.8S (x = 0.8) was optimized. Analysis of the numerical solutions via SCAPS provides a trend and pattern for Cd0.2Zn0.8S as an effective electron transport layer for planar perovskite solar cells with a yield efficiency up to 24.83%. The planar perovskite solar cell shows an open-circuit voltage of 1.224 V, short-circuit current density of 25.283 mA/cm(2) and a fill factor of 80.22.

引用

页码：3051 / 3058

页数：8

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