Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies

被引：45

作者：

Chen Shuming ^{[1
]}

Liang Bin ^{[1
]}

Liu Biwei ^{[1
]}

Liu Zheng ^{[1
]}

机构：

[1] Natl Univ Def Technol, Coll Comp Sci, Changsha 410073, Hunan, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Bipolar amplification; bulk and SOI inverter chains; digital SET; mixed-mode simulation;

D O I：

10.1109/TNS.2008.2006980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in bulk and PD SOI inverter chains has been studied. It was found that temperature has a very important impact on digital SET. Using a LET of 60 MeV . cm(2)/mg, when temperature rises from -55 to 125 degrees C, the digital SET pulse width in bulk and floating SOI inverter chains rises remarkably, while in a SOI inverter chain with ideal body tie, the digital SET pulse width is almost constant with rising temperature. Detailed analysis showed that pulse broadening with rising temperature is primarily due to enhancement of bipolar amplification.

引用

页码：2914 / 2920

页数：7

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