Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface

An interface modification by hydrocarbon radicals from cracked-propane(C3H8) and dimethylgermane ((CH3)(2)GeH2:DMGe) in heteroepitaxy of 3C-SiC on Si has been studied with in situ reflection high-energy electron diffraction (RHEED) and a high-resolution scanning electron microscope. In the ease of cracked-C3H8, a clean Si surface is carbonized at 750 degrees C. Whereas, in the case of DMGe, it can he carbonized reproducibly at as low as 650 degrees C. A RHEED pattern of a carbonized layer prepared using DMGe indicates single-crystalline 3C-SiC without twins and Ge-related patterns. The activation energy in the range of 46.9-51.1 kcal/mol is obtained in the initial stage of 3C-SiC growth for both hydrocarbon sources. The difference in 3C-SiC growth by using different hydrocarbon sources is discussed in detail.