Investigation of light element contents in subsurface layers of silicon

被引：29

作者：

Kobzev, A. P. ^{[2
]}

Huran, J. ^{[3
]}

Maczka, D. ^{[4
]}

Turek, M. ^{[1
]}

机构：

[1] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland

[2] Joint Inst Nucl Res, Frank Lab Neutron Phys, Dubna 141980, Russia

[3] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[4] Inst Atom Energy, Swierk Warsaw, Poland

来源：

VACUUM | 2009年 / 83卷

关键词：

Silicon; Hydrogen; Carbon; Films; ERD; RBS; PECVD;

D O I：

10.1016/j.vacuum.2009.01.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A special methodology for determination of light element concentrations in subsurface layers of solids is developed. The clue of this methodology is simultaneous application of Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection (ERD). The first analytical technique is used as a tool enabling the precise measurement of the number of He ions irradiating the target whilst the second one is appropriate for an analysis of a target containing light elements. The measurements of atomic concentrations in amorphous hydrogenated silicon carbide (a-SiCx:H) and in amorphous hydrogenated carbon (a-C:H) were done applying the described method (results for a-SiCx:H only are presented in the paper). The possibility for high precision measurements of depth distributions of light elements is also discussed. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：S124 / S126

页数：3