Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes

被引：36
|
作者：
Zhou, Leidang [1 ]
Lu, Xing [2 ]
Wu, Jin [2 ]
Jiang, Huaxing [3 ]
Chen, Liang [4 ]
Ouyang, Xiaoping [4 ]
Lau, Kei May [3 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
[2] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
[4] Northwest Inst Nucl Technol, Radiat Detect Res Ctr, Xian 710024, Shaanxi, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 07期
关键词：
GaN; p-n diode; self-powered; X-ray detectors; SILICON-CARBIDE; SENSORS;
D O I：
10.1109/LED.2019.2914585
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN offers an excellent potential for fabricating X-ray detectors, taking advantage of its superior material properties and well-developed manufacturing technologies. In this letter, we demonstrated a self-powered fast-response X-ray detection using GaN-based vertical p-n diodes grown on a bulk GaN substrate. Attributed to the high crystalline quality achieved by homoepitaxy, the fabricated photodiodes exhibited an excellent rectification behavior, and therefore, a strong photovoltaic response to X-ray illumination when biased at 0 V. The transient X-ray detection analysis revealed that the self-powered detectors have a relatively short response time (< 20 ms) and a good linear response to the X-ray incident dose rate with a high specific sensitivity of 170 nC.Gy(-1).cm(-2).
引用
收藏
页码：1044 / 1047
页数：4
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