Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions

被引：77

作者：

Balakrishnan, Nilanthy ^{[1
]}

Kudrynskyi, Zakhar R. ^{[3
]}

Fay, Michael W. ^{[2
]}

Mudd, Garry W. ^{[1
]}

Svatek, Simon A. ^{[1
]}

Makarovsky, Oleg ^{[1
]}

Kovalyuk, Zakhar D. ^{[3
]}

Eaves, Laurence ^{[1
]}

Beton, Peter H. ^{[1
]}

Patane, Amalia ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

[3] Natl Acad Sci Ukraine Chernivtsi, Inst Problems Mat Sci, UA-58001 Kiev, Ukraine

来源：

ADVANCED OPTICAL MATERIALS | 2014年 / 2卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

metal chalcogenides; electroluminescence; van der Waals crystals; homojunctions; heterojunctions; HETEROSTRUCTURES; NANOSHEETS;

D O I：

10.1002/adom.201400202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Room temperature electroluminescence from semiconductor junctions is demonstrated. The junctions are fabricated by the exfoliation and direct mechanical adhesion of InSe and GaSe van der Waals layered crystals. Homojunction diodes formed from layers of p- and n-type InSe exhibit electroluminescence at energies close to the bandgap energy of InSe (Eg = 1.26 eV). In contrast, heterojunction diodes formed by combining layers of p-type GaSe and n-type InSe emit photons at lower energies, which is attributed to the generation of spatially indirect excitons and a staggered valence band lineup for the holes at the GaSe/InSe interface. These results demonstrate the technological potential of mechanically formed heterojunctions and homojunctions of direct-bandgap layered GaSe and InSe compounds with an optical response over an extended wavelength range, from the near-infrared to the visible spectrum.

引用

页码：1064 / 1069

页数：6

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