Electron mobility improvement by in situ annealing before deposition of HfO2 gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistor

被引：0

作者：

Oda, Minoru ^{[1
]}

Irisawa, Toshifumi ^{[1
]}

Jevasuwan, Wipakorn ^{[1
]}

Maeda, Tatsuro ^{[1
]}

Kamimuta, Yuuichi ^{[1
]}

Ichikawa, Osamu ^{[2
]}

Ishihara, Toshio ^{[2
]}

Osada, Takenori ^{[2
]}

Tezuka, Tsutomu ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Collaborat Res Team, Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

[2] Sumitomo Chem Co Ltd, IT Related Chem Res Lab, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 06期

基金：

日本学术振兴会;

关键词：

ATOMIC-LAYER DEPOSITION; INGAAS; PERFORMANCE; MOSFETS; AL2O3; DESORPTION;

D O I：

10.7567/APEX.7.061202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron mobility in HfO2/In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistors (nMISFETs) has been found to be significantly enhanced in the sub-1.0 nm equivalent oxide thickness (EOT) regime by annealing before the atomic layer deposition (ALD) of the HfO2 gate dielectric. XPS measurements revealed that the predeposition annealing increased the amount of GaOx and reduced the amount of AsOx at the MIS interface, which is considered to reduce the trapped charge density and enhance the mobility, especially in the low-surface-carrier-density region. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 5 条

[1] Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
Quang Ho Luc
Cheng, Shou Po
Chang, Po Chun
Huy Binh Do
Chen, Jin Han
Minh Thien Huu Ha
Sa Hoang Huynh
Hu, Chenming Calvin
Lin, Yueh Chin
Chang, Edward Yi
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (08) : 974 - 977
[2] In0.53Ga0.47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics
Zhao, Han
Yum, Jung Hwan
Chen, Yen-Ting
Lee, Jack C.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 2024 - 2027
[3] High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
Lin, T. D.
Chang, W. H.
Chu, R. L.
Chang, Y. C.
Chang, Y. H.
Lee, M. Y.
Hong, P. F.
Chen, Min-Cheng
Kwo, J.
Hong, M.
APPLIED PHYSICS LETTERS, 2013, 103 (25)
[4] Low Threshold Voltage and High Mobility N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Using Hf-Si/HfO2 Gate Stack Fabricated by Gate-Last Process
Ando, Takashi
Hirano, Tomoyuki
Tai, Kaori
Yamaguchi, Shinpei
Yoshida, Shinichi
Iwamoto, Hayato
Kadomura, Shingo
Watanabe, Heiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (01)
[5] Atomic layer deposited (TiO2)x(Al2O3)1-x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications
Mahata, C.
Mallik, S.
Das, T.
Maiti, C. K.
Dalapati, G. K.
Tan, C. C.
Chia, C. K.
Gao, H.
Kumar, M. K.
Chiam, S. Y.
Tan, H. R.
Seng, H. L.
Chi, D. Z.
Miranda, E.
APPLIED PHYSICS LETTERS, 2012, 100 (06)

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