Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

被引：12

作者：

Moon, Dong-Il ^{[1
]}

Kim, Jee-Yeon ^{[1
]}

Moon, Joon-Bae ^{[1
]}

Kim, Dong-Oh ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Bandgap engineering; capacitorless; 1T-DRAM; multifunction; nonvolatile memory; SONOS; unified-RAM (URAM); vertical channel; URAM; DRAM; CELL;

D O I：

10.1109/TED.2013.2292316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4F(2) multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor.

引用

页码：60 / 65

页数：6

共 15 条

[1] Patterning sub-30-nm MOSFET gate with i-line lithography
Asano, K
Choi, YK
King, TJ
Hu, CM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 1004 - 1006
[2] Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels
Asenov, A
Saini, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1718 - 1724
[3] ANALYSIS AND CONTROL OF FLOATING-BODY BIPOLAR EFFECTS IN FULLY DEPLETED SUBMICROMETER SOI MOSFETS
CHOI, JY
FOSSUM, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1384 - 1391
[4] Choi S.-J., 2010, P IEEE IEDM DEC, P532
[5] Han JW, 2008, S VLSI TECH, P157
[6] A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM
Han, Jin-Woo
Ryu, Seong-Wan
Kim, Chungjin
Kim, Sungho
Im, Maesoon
Choi, Sung Jin
Kim, Jin Soo
Kim, Kwang Hee
Lee, Gi Sung
Oh, Jae Sub
Song, Myeong Ho
Park, Yun Chang
Kim, Jeoung Woo
Choi, Yang-Kyu
[J]. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 929 - +
[7] Han JW, 2008, INT EL DEVICES MEET, P227
[8] Hwang S.-M., 2011, P S VLSI TECHN JUN, P172
[9] Lue Hang-Ting., 2005, Electron Devices Meeting, P547
[10] Moon D. I., 2010, IEDM, P284

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