Luminescence, Raman and synchrotron XPS study of amorphous Ge2S3 based films

被引：0
作者：
Mitsa, V. [1 ]
Ivanda, M. [2 ]
Gamulin, O. [3 ]
Holomb, R. [1 ]
Kondrat, O. [1 ]
Popovych, N. [1 ]
Lovas, G. [1 ]
Petreckiy, S. [1 ]
Tsud, N. [4 ]
Matolin, V. [5 ]
Prince, K. C.
机构：
[1] Uzhgorod Natl Univ, Inst Solid State Phys & Chem, Uzhgorod, Ukraine
[2] Rudjer Boskovic Inst, Div Mat Phys, Zagreb 10000, Croatia
[3] Univ Zagreb, Sch Med, Dept Phys & Biophys, Zagreb 10000, Croatia
[4] Elettra Sincrotrone Trieste SCpA, I-34149 Trieste, Italy
[5] Charles Univ Prague, Fac Math & Phys, Dept Surface & Plasma Sci, CR-18000 Prague, Czech Republic
来源：
2013 36TH INTERNATIONAL CONVENTION ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONICS AND MICROELECTRONICS (MIPRO) | 2013年
关键词：
VISIBLE PHOTOLUMINESCENCE; THIN-FILMS; AS-S; GLASSES; SPECTROSCOPY;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Ge2S3-based films have been investigated using Raman, photoluminescence and photoemission spectroscopy. For the sake of comparison some of the photoluminescent properties of bulk glasses have been used. The synchrotron photoelectron spectroscopy (SRPES) and XPS spectra of a-Ge2S3 films have been measured after the illumination and annealing. The changes in the parameters of the film's core levels induced by near or above band gap light and thermal treatment are discussed in the paper. We consider the possibility that the PL radiation in Ge2S3-based films is a surface contaminant effect from native oxidized layer, which might have formed in the air.
引用
收藏
页码：28 / 33
页数：6
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