Lorentzian noise in the two-dimensional electron gas of AlxGa1-xAs/GaAs quantum wells

被引:6
作者
Chen, YP [1 ]
Van Vliet, CM
Koenraad, PM
Larkins, GL
机构
[1] Florida Int Univ, Ctr Engn & Appl Sci, Miami, FL 33174 USA
[2] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1063/1.371732
中图分类号
O59 [应用物理学];
学科分类号
摘要
Current noise spectra S-I(omega) are reported on samples grown by the molecular beam epitaxy technique, with current-carrying contacts, acting as source and drain, and two probes extending into the two-dimensional electron gas (2DEG) of the AlGaAs/GaAs quantum well, in the range 77-295 K for frequencies of 10 Hz to 1 MHz. The time constants are almost independent of temperature and the current dependence is close to linear. The noise is interpreted as Lorentzian-modulated shot noise of the 2DEG current. (C) 1999 American Institute of Physics. [S0021-8979(99)08323-1].
引用
收藏
页码:6206 / 6212
页数:7
相关论文
共 15 条
[1]  
Brillouin L., 1934, HELV PHYS ACTA S, V7, P47
[2]   FLUCTUATIONS IN THE NUMBER OF CHARGE CARRIERS IN A SEMICONDUCTOR [J].
BURGESS, RE .
PHYSICA, 1954, 20 (11) :1007-1010
[3]  
CHEN YP, UNPUB IEEE T ELECT D
[4]  
CHEN YP, 1998, THESIS FLORIDA INT U
[5]   NOISE IN CATHODOLUMINESCENCE RADIATION FROM A (CAMG)(SIO3)2-TI PHOSPHOR [J].
FIJNAUT, HM ;
ZIJLSTRA, RJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (01) :45-&
[6]   CURRENT NOISE IN N-TYPE ALXGA1-XAS [J].
HOFMAN, F ;
ZIJLSTRA, RJJ ;
HENNING, JCM .
SOLID-STATE ELECTRONICS, 1988, 31 (02) :279-282
[7]   GENERATION RECOMBINATION NOISE IN ALXGA1-XAS [J].
HOFMAN, F ;
ZIJLSTRA, RJJ ;
DEFREITAS, JMB ;
HENNING, JCM .
SOLID-STATE ELECTRONICS, 1991, 34 (01) :23-32
[8]  
MACDONALD DKC, 1948, REP PROG PHYS, V12, P56
[9]  
MANDEL L, 1963, P PHYS SOC LOND, V81, P1140
[10]  
Nag B.R., 1972, Theory of Electrical Transport in Semiconductors, V1st