Modeling and Analysis of Transient Heat for 3D IC

被引：0

作者：

Chatterjee, Subhajit ^{[1
]}

Roy, Surajit Kr. ^{[2
]}

Giri, Chandan ^{[2
]}

Rahaman, Hafizur ^{[1
]}

机构：

[1] IIEST Shibpur, Sch VLSI Technol, Howrah 711103, W Bengal, India

[2] IIEST Shibpur, Dept Informat Technol, Howrah 711103, W Bengal, India

来源：

VLSI DESIGN AND TEST | 2017年 / 711卷

关键词：

3D IC; 3D IC thermal model; 3D IC transient heat analysis; 3D IC heat equation; 3D IC testing; INTEGRATED-CIRCUITS; 3-D ICS; DESIGN;

D O I：

10.1007/978-981-10-7470-736

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Three dimensionally integrated circuit (3D IC) is a promising technology in semiconductor industry. 3D IC provides several benefits over the conventional 2D IC. However, thermal issues are major concern due to high power density. So, thermal management is a challenging task for 3D IC. This paper presents a new thermal model for calculating the temperature of a 3D IC accurately. The model is simulated for 3D ICs to study the effects of various parameters like the thermal conductivities of the interface sub-layers, heat sink, power dissipation etc. on temperature of the IC. It is also observed how these parameters affect the transient thermal behavior of the IC.

引用

页码：365 / 375

页数：11

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