Magnetically induced nonvolatile magnetoresistance and resistance memory effect in phase-separated manganite thin films

被引：6

作者：

Li, Qian

Cao, Qingqi

Wang, Dunhui ^{[1
]}

Du, Youwei

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 08期

关键词：

electronic phase-separated manganite; metal-to-insulator transition; resistance memory; nonvolatile magnetoresistance; PERCOLATION;

D O I：

10.1088/1361-6463/aa586e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of magnetically induced resistance memory effect in a typical electronic phase-separated manganite La5/8-xPrxCa3/8MnO3 (x = 0.3) thin film. In the hysteresis region of metal-to-insulator transition, the resistance exhibits a sharp drop with the application of magnetic field and maintains the low resistance state after the removal of field, showing a nonvolatile magnetoresistance effect. The high resistance state can be recovered until the temperature is warmed. More explicit measurements at the hysteresis region exhibit the non-volatility and irreversibility of magnetoresistance, which can be ascribed to the percolative feature in the electronic phase-separated manganite. The origin and potential applications of these interesting effects are discussed.

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页数：7

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