Magnetically induced nonvolatile magnetoresistance and resistance memory effect in phase-separated manganite thin films

被引：6
作者：
Li, Qian
Cao, Qingqi
Wang, Dunhui [1 ]
Du, Youwei
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 08期
关键词：
electronic phase-separated manganite; metal-to-insulator transition; resistance memory; nonvolatile magnetoresistance; PERCOLATION;
D O I：
10.1088/1361-6463/aa586e
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the observation of magnetically induced resistance memory effect in a typical electronic phase-separated manganite La5/8-xPrxCa3/8MnO3 (x = 0.3) thin film. In the hysteresis region of metal-to-insulator transition, the resistance exhibits a sharp drop with the application of magnetic field and maintains the low resistance state after the removal of field, showing a nonvolatile magnetoresistance effect. The high resistance state can be recovered until the temperature is warmed. More explicit measurements at the hysteresis region exhibit the non-volatility and irreversibility of magnetoresistance, which can be ascribed to the percolative feature in the electronic phase-separated manganite. The origin and potential applications of these interesting effects are discussed.
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页数：7
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