Interfacial misfit array formation for GaSb growth on GaAs

被引：80

作者：

Huang, Shenghong ^{[1
]}

Balakrishnan, Ganesh ^{[2
]}

Huffaker, Diana L. ^{[3
,4
]}

机构：

[1] Univ New Mexico, Dept Earth & Planetary Sci, Albuquerque, NM 87131 USA

[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Univ Calif Los Angeles, Calif Nano Syst Inst, Los Angeles, CA 90095 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期

关键词：

DISLOCATIONS; MORPHOLOGY; EPITAXY;

D O I：

10.1063/1.3129562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit (IMF) dislocation array growth mode. Under optimized growth conditions, only pure 90 dislocations are generated along both [110] and [1 (1) over bar0] directions that are located at GaSb/GaAs interface, which leads to very low threading dislocation density propagated along the growth direction. The long-range uniformity and subsequent strain relaxation of the 2D and periodic IMF array are demonstrated via transmission electron microscopy and scanning transmission electron microscopy images at GaSb/GaAs interface. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3129562]

引用

页数：5

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