Pulsed I-V studies on 0.5 μm GaAs MESFETs

被引：0

作者：

Kumar, A ^{[1
]}

Sharma, R ^{[1
]}

Trivedi, RK ^{[1
]}

Ray, UC ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well established in the literature that the Pulsed I-V characteristics give a better representation of non-linear drain current in MESFETs than the conventional DC I-V curves. This paper presents a detailed study of the Pulsed I-V characteristics of a typical 0.5 mum gate GaAs MESFET fabricated in-house. An attempt has been made to separate out the device self-heating effects from the traps-related phenomena. Our study concludes that the self-heating effect is less important and the traps-related,effects is the dominant factor for the observed dispersion in the devices studied in this work.

引用

页码：878 / 881

页数：4

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