Pulsed I-V studies on 0.5 μm GaAs MESFETs

被引：0
|
作者：
Kumar, A [1 ]
Sharma, R [1 ]
Trivedi, RK [1 ]
Ray, UC [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is well established in the literature that the Pulsed I-V characteristics give a better representation of non-linear drain current in MESFETs than the conventional DC I-V curves. This paper presents a detailed study of the Pulsed I-V characteristics of a typical 0.5 mum gate GaAs MESFET fabricated in-house. An attempt has been made to separate out the device self-heating effects from the traps-related phenomena. Our study concludes that the self-heating effect is less important and the traps-related,effects is the dominant factor for the observed dispersion in the devices studied in this work.
引用
收藏
页码：878 / 881
页数：4
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