Pulsed I-V studies on 0.5 μm GaAs MESFETs

被引：0
|
作者：
Kumar, A [1 ]
Sharma, R [1 ]
Trivedi, RK [1 ]
Ray, UC [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is well established in the literature that the Pulsed I-V characteristics give a better representation of non-linear drain current in MESFETs than the conventional DC I-V curves. This paper presents a detailed study of the Pulsed I-V characteristics of a typical 0.5 mum gate GaAs MESFET fabricated in-house. An attempt has been made to separate out the device self-heating effects from the traps-related phenomena. Our study concludes that the self-heating effect is less important and the traps-related,effects is the dominant factor for the observed dispersion in the devices studied in this work.
引用
收藏
页码：878 / 881
页数：4
相关论文
共 50 条
  • [1] Thermal characterization of mesfets using I-V pulsed and DC measurements
    Hammache, A
    Brassard, G
    Bouchard, M
    Beauregard, F
    Akyel, C
    Ghannouchi, FM
    IMTC/97 - IEEE INSTRUMENTATION & MEASUREMENT TECHNOLOGY CONFERENCE: SENSING, PROCESSING, NETWORKING, PROCEEDINGS VOLS 1 AND 2, 1997, : 664 - 667
  • [2] A seven-parameter nonlinear I-V characteristics model for sub-μm range GaAs MESFETs
    Islam, MS
    Zaman, MM
    SOLID-STATE ELECTRONICS, 2004, 48 (07) : 1111 - 1117
  • [3] Pulsed I-V diagnostic measurements for RF GaAs devices
    Johnson, EM
    51ST ARFTG CONFERENCE DIGEST, 1998, : 77 - 82
  • [4] Numerical analysis of the effect of p-regions on the I-V kink in GaAs MESFETs
    Nishihori, Kazuya
    Miyamoto, Yasuyuki
    IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (08): : 1643 - 1649
  • [5] THREE-SECTION MODEL FOR COMPUTING I-V CHARACTERISTICS OF GaAs MESFETS.
    Ki, Hyeon Cheol
    Son, Sang Hee
    Park, Kwangmean
    Kwack, Kae Dal
    IEEE Transactions on Electron Devices, 1987, ED-34 (09) : 1929 - 1933
  • [6] An Improved Nonlinear DC I-V Characteristics Model for Nanometer Range GaAs MESFETs
    Islam, M. S.
    Islam, Muhymin
    Hasan, Mohammad Raziul
    Islam, S. M. Naeemul
    TENCON 2009 - 2009 IEEE REGION 10 CONFERENCE, VOLS 1-4, 2009, : 941 - 945
  • [7] Pulsed I-V for nonlinear modeling
    Dunleavy, L
    Clausen, W
    Weller, T
    MICROWAVE JOURNAL, 2003, 46 (03) : 68 - +
  • [8] Effect of gate profile on the characteristics of 0.5μm GaAs MESFETs
    Naik, AA
    Rawal, DS
    Prabhakar, S
    Saravanan, GS
    Sehgal, BK
    Gulati, R
    Vyas, HP
    Kumar, R
    Suryanarayana, P
    Rao, AVSK
    Govindacharyulu, PA
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 1148 - 1151
  • [9] Study of Self-Heating in GaAs pHEMTs using Pulsed I-V Analysis
    Schwitter, Bryan
    Albahrani, Sayed A.
    Parker, Anthony
    Dunleavy, Lawrence
    Heimlich, Michael
    2013 81ST ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG), 2013,
  • [10] Pulsed I-V on TFETs: Modeling and Measurements
    Smets, Quentin
    Verhulst, Anne
    Kim, Ji-Hong
    Campbell, Jason P.
    Nminibapiel, David
    Veksler, Dmitry
    Shrestha, Pragya
    Pandey, Rahul
    Simoen, Eddy
    Gundlach, David
    Richter, Curt
    Cheung, Kin P.
    Datta, Suman
    Mocuta, Anda
    Collaert, Nadine
    Thean, Aaron V. -Y.
    Heyns, Marc M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (04) : 1489 - 1497
12345