Crystal growth and magneto-transport behavior of PdS1-δ

被引：2

作者：

Cao, Lin ^{[1
,2
]}

Lv, Yang-Yang ^{[1
,2
]}

Chen, Si-Si ^{[1
,3
]}

Li, Xiao ^{[1
,3
]}

Zhou, Jian ^{[1
,2
,4
]}

Yao, Shu-Hua ^{[1
,2
,4
]}

Chen, Y. B. ^{[1
,3
,4
]}

Lu, Minghui ^{[1
,2
,4
]}

Chen, Yan-Feng ^{[1
,2
,4
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China

[4] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2018年 / 487卷

基金：

中国国家自然科学基金;

关键词：

Single crystal growth; Modified flux method; PdS; Semiconducting materials; Negative magnetoresistance; PALLADIUM; MAGNETORESISTANCE;

D O I：

10.1016/j.jcrysgro.2018.02.026

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

PdS is theoretically proposed to novel topological material with eight-band fermions. Here, PdS1-delta crystals were successfully grown from KI as solvent by modified flux method. The single crystalline quality and compositional homogeneity of grown PdS1-delta are characterized by X-ray diffraction and energy dispersion spectroscopy. Temperature dependent electrical transport property of PdS1-delta demonstrates a semiconductor-like behavior. Analysis of temperature-dependent resistance indicates that there is variable-range-hopping behavior at low temperature. The clear negative MR of PdS1-delta single crystals is measured at the low temperature (< 30 K), which may be ascribed to the interaction between conducting carriers and localized moments. however, the magneto-transport results have not shown the clues of topological feature of PdS. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：116 / 119

页数：4

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