Study of Si ion implantation in GaN on AL2O3

被引：0
作者：
Toyoda, Y. [1 ]
Tajima, T. [1 ]
Nomoto, K. [1 ]
Nakamura, T. [1 ]
机构：
[1] Hosei Univ, Koganei, Tokyo 1848584, Japan
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28 | 2010年 / 28卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon ions have been implanted into GaN in the dose range from 1.02x10(15)/cm(2) to 3.44x10(15)/cm(2) and ion energy of 30keV, 80keV, 150keV. The Si-implanted GaN has been annealed at 1200 degrees C, 1250 degrees C, 1300 degrees C in N-2 gas flow for 2 minutes. The surface condition of GaN as annealed at 1300 degrees C shows that Ga in GaN sample sublimated. A low sheet resistance of 4752/o for implanted Si ions can be achieved for a dose of 1.02x10(15)/cm(2) with implantation energy of 150keV. A low contact resistance of 1.48x10(-7)11cm(2) for implanted Si atoms can be achieved for a dose of 1.72x10(15)/cm(2) with implantation energy of 30keV.
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页码：103 / 106
页数：4
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