Study of Si ion implantation in GaN on AL2O3

Silicon ions have been implanted into GaN in the dose range from 1.02x10(15)/cm(2) to 3.44x10(15)/cm(2) and ion energy of 30keV, 80keV, 150keV. The Si-implanted GaN has been annealed at 1200 degrees C, 1250 degrees C, 1300 degrees C in N-2 gas flow for 2 minutes. The surface condition of GaN as annealed at 1300 degrees C shows that Ga in GaN sample sublimated. A low sheet resistance of 4752/o for implanted Si ions can be achieved for a dose of 1.02x10(15)/cm(2) with implantation energy of 150keV. A low contact resistance of 1.48x10(-7)11cm(2) for implanted Si atoms can be achieved for a dose of 1.72x10(15)/cm(2) with implantation energy of 30keV.