Study of Si ion implantation in GaN on AL2O3

被引：0

作者：

Toyoda, Y. ^{[1
]}

Tajima, T. ^{[1
]}

Nomoto, K. ^{[1
]}

Nakamura, T. ^{[1
]}

机构：

[1] Hosei Univ, Koganei, Tokyo 1848584, Japan

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28 | 2010年 / 28卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon ions have been implanted into GaN in the dose range from 1.02x10(15)/cm(2) to 3.44x10(15)/cm(2) and ion energy of 30keV, 80keV, 150keV. The Si-implanted GaN has been annealed at 1200 degrees C, 1250 degrees C, 1300 degrees C in N-2 gas flow for 2 minutes. The surface condition of GaN as annealed at 1300 degrees C shows that Ga in GaN sample sublimated. A low sheet resistance of 4752/o for implanted Si ions can be achieved for a dose of 1.02x10(15)/cm(2) with implantation energy of 150keV. A low contact resistance of 1.48x10(-7)11cm(2) for implanted Si atoms can be achieved for a dose of 1.72x10(15)/cm(2) with implantation energy of 30keV.

引用

页码：103 / 106

页数：4

共 50 条

[1] Dual -: Energy Si ion implantation in GaN/AlGaN/GaN layers on Al2O3
Shiino, T.
Saitoh, T.
Kajiwara, H.
Toyoda, Y.
Satoh, M.
Nakamura, T.
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS, 2008, (26): : 97 - 99
[2] Dual-energy Si ion implantation in epitaxial GaN layers on AlN/Al2O3
Ozaki, D.
Ebihara, J.
Ohshima, Y.
Takeuchi, R.
Inada, T.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 320 - 323
[3] Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures
Wang, Chuanju
AlQatari, Feras
Khandelwal, Vishal
Lin, Rongyu
Li, Xiaohang
APPLIED SURFACE SCIENCE, 2023, 608
[4] STRENGTHENING OF AL2O3 BY ION-IMPLANTATION
HIOKI, T
ITOH, A
NODA, S
DOI, H
KAWAMOTO, J
KAMIGAITO, O
JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (12) : 1099 - 1101
[5] ION-IMPLANTATION EFFECTS IN AL2O3
ARNOLD, GW
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 210 - 210
[6] Effects of Al ion implantation on the strength of Al2O3 particles
Ogiso, Hisato
Yoshida, Mikiko
Nakano, Shizuka
Akedo, Jun
SURFACE & COATINGS TECHNOLOGY, 2007, 201 (19-20): : 8180 - 8184
[7] Etching of amorphous Al2O3 produced by ion implantation
McHargue, CJ
Hunn, JD
Joslin, DL
Alves, E
daSilva, MF
Soares, JC
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 596 - 598
[8] Etching of amorphous Al2O3 produced by ion implantation
McHargue, Carl J.
Hunn, John D.
Joslin, Debra L.
Alves, E.
da Silva, M.F.
Soares, J.C.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 127-128 : 596 - 598
[9] Correlative Atomic Coordination and Interfacial Charge Polarity in Al2O3/GaN and Al2O3/Si Heterostructures
Wang, Chuanju
Li, Xiaohang
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023, 17 (03):
[10] Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
Gruzza, B
Akkal, B
Bideux, L
Benamara, Z
Robert, C
VACUUM, 2002, 67 (01) : 125 - 129

← 1 2 3 4 5 →