Voc transient in silicon heterojunction solar cells with μc-SiOx:H window layers

被引：1

作者：

Yang, Xueliang ^{[1
,2
]}

Song, Jianmin ^{[1
,3
]}

Yang, Jing ^{[1
]}

Bai, Jingjing ^{[1
]}

Dang, Wei ^{[1
]}

Chen, Jianhui ^{[1
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Inst Photovolta, Baoding 071002, Peoples R China

[2] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China

[3] Agr Univ Hebei, Coll Sci, Baoding 071001, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 30期

关键词：

V-oc transients; heterojunction; microcrystalline silicon oxide; built-in electric field; valance band offset; CIRCUIT VOLTAGE DECAY; EMITTER LAYERS; EFFICIENCY; FILMS; OPTIMIZATION; PASSIVATION; TEMPERATURE; PERFORMANCE; INTERFACE; CONTACT;

D O I：

10.1088/1361-6463/aacc40

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon heterojunction (SHJ) solar cells with hydrogenated microcrystalline silicon oxide (mu c-SiOx:H) emitters are fabricated and studied using the open circuit voltage (V-oc) transient. The built-in electric field (E-in), minority carrier lifetime, hole mobility, and a-Si:H/c-Si heterointerface valance band offset (Delta E-v) of the solar cells can be excavated by the V-oc transient. The rising rate of the V-oc transient curve, which has not been studied in previous research, is found to be dependent on E-in in Sill cells. The measurements of the V-oc transient curves at different excitation intensities are used as a powerful approach for analysis of the Delta E-v difference between SHJ cells with different mu c-SiOx:H emitters. Based on this analysis, it is demonstrated that the origin of the S-shaped J-V characteristics of SHJ cells lies in an inferior E-in and/or severe interface Delta E-v,and the role of Delta E-v is more dominant.

引用

页数：9

共 48 条

[1] Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution [J].

Bacioglu, A ;

Kodolbas, AO ;

Öktü, Ö .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 89 (01) :49-59

[2] Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions [J].

Bian, Jieyu ;

Zhang, Liping ;

Guo, Wanwu ;

Wang, Dongliang ;

Meng, Fanying ;

Liu, Zhengxin .

APPLIED PHYSICS EXPRESS, 2014, 7 (06)

[3] Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells [J].

Bivour, Martin ;

Reichel, Christian ;

Hermle, Martin ;

Glunz, Stefan W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 106 :11-16

[4] Recombination in polymer-fullerene bulk heterojunction solar cells [J].

Cowan, Sarah R. ;

Roy, Anshuman ;

Heeger, Alan J. .

PHYSICAL REVIEW B, 2010, 82 (24)

[5] Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells [J].

Cuony, P. ;

Marending, M. ;

Alexander, D. T. L. ;

Boccard, M. ;

Bugnon, G. ;

Despeisse, M. ;

Ballif, C. .

APPLIED PHYSICS LETTERS, 2010, 97 (21)

[6] Toward a better physical understanding of a-Si:H/c-Si heterojunction solar cells [J].

Damon-Lacoste, J. ;

Roca i Cabarrocas, P. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)

[7]

De Wolf Stefaan, 2012, Green, V2, P7, DOI 10.1515/green-2011-0018

[8] MATHEMATICAL FORMULATION FOR THE PHOTOINDUCED OPEN CIRCUIT VOLTAGE DECAY METHOD FOR MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SOLAR-CELLS [J].

DHARIWAL, SR ;

VASU, NK .

ELECTRON DEVICE LETTERS, 1981, 2 (02) :53-55

[9] Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure [J].

Filonovich, S. A. ;

Aguas, H. ;

Bernacka-Wojcik, I. ;

Gaspar, C. ;

Vilarigues, M. ;

Silva, L. B. ;

Fortunato, E. ;

Martins, R. .

VACUUM, 2009, 83 (10) :1253-1256

[10] Improving solar cell efficiency with optically optimised TCO layers [J].

Fleischer, K. ;

Arca, E. ;

Shvets, I. V. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 101 :262-269

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