Photoconductivity in chalcogenide glasses on the base of the barrier-cluster model

被引：0
作者：
Banik, I. [1 ]
机构：
[1] Slovak Tech Univ, Fac CE, Dept Phys, Bratislava 81368, Slovakia
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 05期
关键词：
Photoconductivity; Optical phenomena; Cluster; Barrier-cluster model; Chalcogenide glass; Optical absorption; Amorphous; Semiconductor; Non-crystalline semiconductor; TIME-RESOLVED PHOTOLUMINESCENCE; MEDIUM-RANGE ORDER; POINT-OF-VIEW; OPTICAL-ABSORPTION; NONCRYSTALLINE SEMICONDUCTORS; TEMPERATURE-DEPENDENCE; AMORPHOUS-SILICON; GAP STATES; LUMINESCENCE; ELECTROABSORPTION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article we present the new point of view on the photoconductivity in chalcogenide glasses. On the base of the barrier-cluster model we attempt to explain the temperature dependence of the photoconductivity and the influence of the radiation intensity on these dependence.
引用
收藏
页码：755 / 769
页数：15
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