Controlling template response during imprint lithography

被引:1
|
作者
Schuetter, SD [1 ]
Dicks, GA [1 ]
Nellis, GF [1 ]
Engelstad, RL [1 ]
Lovell, EG [1 ]
Schulteis, BF [1 ]
机构
[1] Univ Wisconsin, Dept Mech Engn, Computat Mech Ctr, Madison, WI 53706 USA
来源
关键词
Step-and-Flash Imprint Lithography; template distortion; finite element model; Reynolds equation;
D O I
10.1117/12.546925
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Step-and-Flash Imprint Lithography (S-FILTH) is a principal candidate for the next-generation lithography at the 45-nm node (and below). In imprint lithography, a monomer solution is dispensed onto the wafer. The monomer fills small features in a template that is lowered onto the wafer. The monomer is cured, causing it to solidify so that a three-dimensional replica of the template features is produced and remains on the wafer after the template is removed. Because this is a one-to-one process, any distortions of the template during the squeezing process will be manifested directly as errors in the features that are imprinted on the substrate. A finite element (FE) structural model of the S-FIL template has been created to predict the distortions due to mounting, gravity, and the fluid pressure distribution that arises from the viscous flow of the polymer liquid during the imprint process. Distortions take the form of both in-plane and out-of-plane displacements. An axisymmetric, finite difference (FD) model is used to predict the pressure distribution over the template due to viscous flow and surface tension effects. The FE and FD models are coupled using an iterative process in which the pressure distribution and template distortions are calculated at progressing time intervals until the final. desired gap height is achieved, nominally 200 nm. The coupled models are capable of characterizing the fluid-structure interaction that occurs during the imprint process. The results of the model will facilitate the design of system components that are capable of meeting the stringent error budgets associated with the sub-45-nm nodes.
引用
收藏
页码:1023 / 1033
页数:11
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