Visible-light-driven Bi2O3/WO3 composites with enhanced photocatalytic activity

被引:63
作者
Adhikari, Shiba P. [1 ,2 ]
Dean, Hunter [1 ]
Hood, Zachary D. [3 ]
Peng, Rui [3 ]
More, Karren L. [3 ]
Ivanov, Ilia [3 ]
Wu, Zili [3 ]
Lachgar, Abdou [1 ,2 ]
机构
[1] Wake Forest Univ, Dept Chem, Winston Salem, NC 27109 USA
[2] Wake Forest Univ, Ctr Energy Environm & Sustainabil, Winston Salem, NC 27109 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
来源
RSC ADVANCES | 2015年 / 5卷 / 111期
关键词
HYDROTHERMAL SYNTHESIS; RHODAMINE-B; WATER; SEMICONDUCTOR; DEGRADATION; WO3; FABRICATION; INTERFACES; SEPARATION; CONVERSION;
D O I
10.1039/c5ra13579f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconductor heterojunctions (composites) have been shown to be effective photocatalytic materials to overcome the drawbacks of low photocatalytic efficiency that results from electron-hole recombination and narrow photo-response range. A novel visible-light-driven Bi2O3/WO3 composite photocatalyst was prepared by hydrothermal synthesis. The composite was characterized by scanning transmission electron microscopy (STEM), scanning electron microscopy (SEM), powder X-ray diffraction (PXRD), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET) surface area, Raman spectroscopy, photoluminescence spectroscopy (PL) and electrochemical impedance spectroscopy (EIS) to better understand the structures, compositions, morphologies and optical properties. Bi2O3/WO3 heterojunction was found to exhibit significantly higher photocatalytic activity towards the decomposition of Rhodamine B (RhB) and 4-nitroaniline (4-NA) under visible light irradiation compared to that of Bi2O3 and WO3. A tentative mechanism for the enhanced photocatalytic activity of the heterostructured composite is discussed based on observed activity, band position calculations, photoluminescence, and electrochemical impedance data. The present study provides a new strategy for the design of composite materials with enhanced visible light photocatalytic performance.
引用
收藏
页码:91094 / 91102
页数:9
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