Photoluminescence at up to 2.4 μm wavelengths from GalnAsBi/AllnAs quantum wells

被引：14

作者：

Butkute, Renata ^{[1
]}

Pacebutas, Vaidas ^{[1
]}

Cechavicius, Bronislovas ^{[1
]}

Nedzinskas, Ramunas ^{[1
]}

Selskis, Algirdas ^{[1
]}

Arlauskas, Andrius ^{[1
]}

Krotkus, Arunas ^{[1
]}

机构：

[1] Ctr Phy Sci & Technol, Vilnius, Lithuania

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 391卷

关键词：

Photoluminescence; Molecular beam epitaxy; Quantum wells; GalnAsBi;

D O I：

10.1016/j.jcrysgro.2014.01.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

5 nm, 10 am and 20 nm-thick GalnAsBi quantum wells were grown on the laP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum structures were 50 am and 100 nm-thick lattice-matched AllnAs, respectively. Quantum wells were grown at the substrate temperature of about 240 degrees C. The maximum bismuth content in the wells was 5.0%. Transmission electron microscopy images revealed sharp interfaces between the wells and barrier layers as well as homogeneous Bi incorporation. Photoluminescence (PL) measurements demonstrated signals from all QW up to the room temperature. PL intensity was stronger in thinner quantum wells where relaxation and clustering effects were avoided. The longest emission wavelength registered reached 2.4 mu m. (C) 2014 Elsevier By. All righrs reserved

引用

页码：116 / 120

页数：5

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