High rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition

被引：47

作者：

Mokuno, Y. ^{[1
]}

Chayahara, A. ^{[1
]}

Soda, Y. ^{[1
]}

Yamada, H. ^{[1
]}

Horino, Y. ^{[1
]}

Fujimori, N. ^{[1
]}

机构：

[1] Natl Inst AIST, Diamond Res Ctr, Ikeda, Osaka 5638577, Japan

来源：

关键词：

high rate growth; microwave plasma CVD; homoepitaxial growth;

D O I：

10.1016/j.diamond.2005.11.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent progress on high rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition is presented. Effects of process parameters, such as the holder diameter and the reactor pressure, on the growth rate is summarized. Nitrogen incorporation in the high rate grown films measured by secondary ion mass spectrometry (SIMS) was 3.9-39 ppm, which is comparable to that of HPHT Ib diamond. As a possible way to grow large diamond, thick diamond growth by the repetition of high rate growth and three-dimensional enlargement in crystal size by the growth on the side {100} surface is introduced. The repetition of high rate growth has been successfully applied to the growth of thick diamond as large as 10 mm. The crystallinity of a 2.1 mm thick diamond characterized by rocking curve of high resolution X-ray diffraction was 10 arcsec, which is also comparable to that of HPHT Ib diamond. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：455 / 459

页数：5

共 50 条

[21] Influence of growth conditions on microstructure and defects in diamond coatings grown by microwave plasma enhanced CVD [J].

Pal, Kalyan Sundar ;

Bysakh, Sandip ;

Mallik, Awadesh Kumar ;

Dandapat, Nandadulal ;

Datta, Someswar ;

Guha, Bichitra K. .

BULLETIN OF MATERIALS SCIENCE, 2015, 38 (03) :717-724

[22] Large single crystal diamond plates produced by microwave plasma CVD [J].

Mokuno, Yoshiaki ;

Chayahara, Akiyoshi ;

Yamada, Hideaki ;

Tsubouchi, Nobuteru .

SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :991-994

[23] Large Area Deposition of Polycrystalline Diamond Coatings by Microwave Plasma CVD [J].

Mallik, Awadesh K. ;

Bysakh, Sandip ;

Pal, Kalyan S. ;

Dandapat, Nandadulal ;

Guha, Bichitra K. ;

Datta, Someswar ;

Basu, Debabrata .

TRANSACTIONS OF THE INDIAN CERAMIC SOCIETY, 2013, 72 (04) :225-232

[24] DISTRIBUTION AND MORPHOLOGY OF DIAMOND DEPOSITED ON WIRE SUBSTRATE BY MICROWAVE PLASMA CVD [J].

LEE, SS ;

ITOH, H ;

SHIMURA, S ;

IWAHARA, H .

NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1993, 101 (11) :1287-1291

[25] Predominant physical quantity dominating macroscopic surface shape of diamond synthesized by microwave plasma CVD [J].

Yamada, Hideaki ;

Mokuno, Yoshiaki ;

Chayahara, Akiyoshi ;

Horino, Yuji ;

Shikata, Shin-ichi .

[26] Parametric study of diamond/Ti thin film deposition in microwave plasma CVD [J].

Cho, Hyun ;

Kim, Jin Kon .

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2005, 15 (01) :10-15

[27] Investigation of nitrogen addition on hydrogen incorporation in CVD diamond films from polycrystalline to nanocrystalline [J].

Tang, C. J. ;

Abe, I. ;

Vieira, L. G. ;

Soares, M. J. ;

Gracio, J. ;

Pinto, J. L. .

[28] PREDICTION OF THE FEASIBILITY OF ORIENTED DIAMOND FILMS BY MICROWAVE PLASMA-ASSISTED CVD [J].

BARRAT, S ;

BAUERGROSSE, E .

[29] Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma [J].

Tang, C. J. ;

Fernandes, A. J. S. ;

Jiang, X. F. ;

Pinto, J. L. ;

Ye, H. .

JOURNAL OF CRYSTAL GROWTH, 2016, 434 :36-41

[30] Investigation of 3C-SiC(111) homoepitaxial growth by CVD at high temperature [J].

Jegenyes, N. ;

Lorenzzi, J. ;

Souliere, V. ;

Dazord, J. ;

Cauwet, F. ;

Ferro, G. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :127-130

← 1 2 3 4 5 →