Communication-The Impact of TaN Barrier Processes on Different Ultra Low-k Dielectrics

被引：2

作者：

Zhang, Xunyuan ^{[1
]}

Gillot, Christophe ^{[2
]}

Zhao, Larry ^{[1
]}

Ryan, E. Todd ^{[1
]}

Wu, Chen ^{[2
]}

机构：

[1] GLOBALFOUNDRIES Inc, Albany, NY 12203 USA

[2] IMEC, B-3001 Heverlee, Flemish Brabant, Belgium

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 12期

关键词：

D O I：

10.1149/2.0241512jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TaN barriers were deposited by physical vapor and atomic layer deposition on different low-k dielectrics with dielectric constant values of 2.4, 2.55 and 2.7. The low-k damage introduced by different TaN processes was studied using metal-insulator-metal capacitors, where the k value was extracted from Capacitance-Voltage measurements. A plasma enhanced atomic layer deposition TaN process caused an increase of k value from 15% to 40% compared to physical vapor deposition TaN and thermal atomic layer deposition. Current-Voltage characteristics showed the presence of moisture impacting the behavior of plasma enhanced atomic layer deposition TaN samples corresponding to a severe plasma damage. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：N160 / N162

页数：3

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