Development of a magnetron sputtering system with an extraordinary strong magnetic field near the target

被引：9

作者：

Ikuta, Hiroshi ^{[1
]}

Yokouchi, Kohei ^{[1
]}

Ohta, Isao ^{[1
]}

Yanagi, Yousuke ^{[2
]}

Itoh, Yoshitaka ^{[2
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] IMRA Mat R&D Co Ltd, Kariya, Aichi 4480021, Japan

来源：

VACUUM | 2008年 / 83卷 / 03期

关键词：

Magnetron sputtering; Extraordinary strong field; Bulk superconductor; ZnO transparent conducting film; Discharge characteristic;

D O I：

10.1016/j.vacuum.2008.04.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a planar sputtering device that uses a melt-processed bulk superconductor to generate the magnetic field. The magnetic field that confines the plasma above the sputtering target is about 1.0 T, which is about 20 times larger than the field normally used for magnetron sputtering. Because of the large magnetic field, discharge at an Ar gas pressure as low as 10(-3) Pa was possible. In this study, we used the ultra-strong-field sputtering technique for depositing Ga-doped ZnO which is attracting interest as a transparent electrode material. We also studied the effect of employing an auxiliary coil to tailor the magnetic field distribution and discuss how the discharge characteristic had changed. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：475 / 478

页数：4

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